PEER-REVIEWED JOURNAL PUBLICATIONS

1. J.P. Kesan, D.P. Neikirk, B.G. Streetman, and P.A. Blakey, “A New Transit Time Device using Quantum Well Injection,” IEEE Electron Device Lett., vol. EDL-8, no. 4, pp. 129-131, Apr. 1987.
2. A.C. Campbell, J.P. Kesan, G.E. Crook, C.M. Maziar, D.P. Neikirk, and B.G. Streetman, “Impedance Switching Effects in GaAs/AlAs Barrier Structures,” Elect. Lett., vol. 23, no. 18, pp. 926-927, 27 Aug. 1987.
3. C.W. Farley, G.E. Crook, J.P. Kesan, T.R. Block, H.A. Stevens, T.J. Mattord, D.P. Neikirk, and B.G. Streetman, “Substrate Rotation and Carbon Generation in a Molecular Beam Epitaxy System,” J. Vac. Sci. & Technol. B, vol. 5, no. 5, pp. 1374-2476, Sep./Oct. 1987.
4. A.C. Campbell, J.P. Kesan, G.E. Crook, C.M. Maziar, D.P. Neikirk, and B.G. Streetman, “Capacitive Hysteresis Effects in 5.0 nm Single and Double Barrier AlAs/GaAs Tunneling Structures grown by Molecular-Beam Epitaxy,” J. Vac. Sci. & Technol. B, vol. 6, no. 2, pp. 651-656, Mar./Apr. 1988.
5. J.P. Kesan, D.P. Neikirk, P.A. Blakey, B.G. Streetman, and T.D. Linton, “Influence of Transit Time Effects of the Optimum Design and Maximum Oscillation Frequency of Quantum Well Oscillators,” IEEE Trans. Electron Devices, vol. ED-35, no. 4, pp. 405-413, Apr. 1988.
6. J.P. Kesan, A. Mortazawi, D.P. Neikirk, and T. Itoh, “Monolithic Millimeter-wave Oscillator using a Transmission Line Periodically Loaded by QWITT Diodes,” Elect. Lett., vol. 24, no. 11, pp. 666-667, 26 May 1988.
7. J.P. Kesan, A. Dodabalapur, D.P. Neikirk, and B.G. Streetman, “Growth and Rapid Thermal Annealing of AlGaAs/InGaAs Pseudomorphic Modulation-Doped Structures,” Appl. Phys. Lett., vol. 53, no. 8, pp. 681-683, 22 Aug. 1988.
8. J.P. Kesan, A Mortazawi, D.R. Miller, T. Itoh, B.G. Streetman, and D.P. Neikirk, “Microwave Frequency Operation of the Quantum Well Injection Transit Time (QWITT) Diode,” Elect. Lett., vol. 24, no. 24, pp. 1473-1474, 24 Nov. 1988.
9. T.J. Mattord, J.P. Kesan, G.E. Crook, T.R. Block, A.C. Campbell, D.P. Neikirk, and B.G. Streetman, “Baffle-free Refractory Dimer Arsenic Source for Molecular-Beam Epitaxy,” J. Vac. Sci. & Technol. B, vol. 6, no. 6, pp. 1667-1670, Nov./Dec. 1988.
10. C.S. Kyono, J.P. Kesan, D.P. Neikirk, C.M. Maziar, and B.G. Streetman, “Dependence of Apparent Barrier Height on Barrier Thickness for Perpendicular Transport in AlAs/GaAs Single Barrier Structures Grown by MBE,” Appl. Phys. Lett., vol. 54, no. 6, pp. 549-551, 6 Feb. 1989.
11. A. Dodabalapur, J.P. Kesan, T.R. Block, D.P. Neikirk, and B.G. Streetman, “Optical and Electrical Characterization of AlGaAs/InGaAs Pseudomorphic HEMT Structures Processed by RTA,” J. Vac. Sci. & Technol. B, vol. 7, no. 2, pp. 380-383, Mar./Apr. 1989.
12. T.J. Mattord, J.P. Kesan, D.P. Neikirk and B.G. Streetman, “A Single-Filament Effusion Cell with Reduced Thermal Gradient for Molecular Beam Epitaxy,” J. Vac . Sci . & Technol. B, vol. 7, no. 2, pp. 214-216, Mar./Apr. 1989.
13. A. Dodabalapur, J.P. Kesan, D.P.Neikirk, and B.G. Streetman, “Photoluminescence Studies of Modulation-Doped Pseudomorphic InGaAs/AlGaAs/GaAs Quantum Wells,” Appl. Phys. Lett., vol. 54, no. 17, pp. 1675-1677, 24 Apr. 1989.
 14. A.C. Campbell, J.P. Kesan, T.R. Block, G.E. Crook, D.P. Neikirk, and B.G. Streetman, “Influence of MBE Growth Temperature on GaAs/AlAs Resonant Tunneling Structures,” J. Elect. Mat., vol. 18, no. 5, pp. 585-588, 1989.
 15. J.P. Kesan, A.Mortazawi, D.R. Miller, V.K. Reddy, D.P. Neikirk, and T. Itoh, “Microwave and Millimeter-Wave QWITT Diode Oscillator,” IEEE Trans. Microwave Theory & Tech., vol. 37, no. 12, pp. 1933-1941, Dec. 1989.
 16. F.K. LeGoues, J.P. Kesan, and S.S. Iyer, “Long-Range Order in Thick, Unstrained Si0.5Ge0.5 Epitaxial Layers,” Phys. Rev. Lett., vol. 64, no. 1, pp. 40-43, 1 Jan. 1990.
 17. A. Dodabalapur, J.P. Kesan, D.P. Neikirk, B.G. Streetman, M.H. Herman, and I.D. Ward, “Photoluminescence and Electroreflectance Studies of Modulation-Doped Pseudomorphic AlGaAs/InGaAs/GaAs Quantum Wells,” J. Elect. Mat., vol. 19, no. 3, pp. 265-270, 1990.
 18. U. Gennser, J.P. Kesan, S.S. Iyer, T.J. Bucelot, and E.S. Yang, “Resonant Tunneling of Holes through Silicon Barriers,” J. Vac. Sci. & Technol. B, vol. 8, no. 2, pp. 210-213, Mar./Apr., 1990.
 19. F.K. LeGoues, J.P. Kesan, S.S. Iyer, J. Tersoff, and R. Tromp, “Surface Stress Induced Order in SiGe Alloy Films,” Phys. Rev. Lett., vol. 64, no. 17, pp. 2038-2041, 23 Apr. 1990.
 20. J.P. Kesan, S.S. Iyer, and J.M. Cotte, “Dopant Incorporation in Epitaxial Germanium Grown on Ge(100) Substrates by MBE,” J. Cryst. Growth, vol. 111, pp. 847-855, 1991.
 21. J.P. Kesan, P.G. May, F.K. LeGoues, and S.S. Iyer, “Si/SiGe Heterostructures Grown on SOI Substrates by MBE for Integrated Optoelectronics,” J. Crystal Growth, vol. 111, pp. 936-942, 1991.
 22. U. Gennser, J.P. Kesan, S.S. Iyer, T.J. Bucelot, and E.S. Yang, “Temperature Dependent Transport Measurements on Strained Si/Si1-xGex Resonant Tunneling Devices,” J. Vac. Sci. & Technol. B, vol. 9, no. 4, pp. 2059-2063, Jul./Aug. 1991.
 23. J.P. Kesan, S.S. Iyer, and J.M. Cotte, “P-Type Doping of Germanium Grown by Molecular Beam Epitaxy on Ge(100) Substrates,” Appl. Phys. Lett., vol. 59, no. 7, pp. 852-854, 12 Aug. 1991.
 24. S.S. Iyer, P.M. Solomon, J.P. Kesan, A.A. Bright, J.L. Freeouf, T.N. Nguyen, and A.C. Warren, “A Gate-Quality Dielectric System for SiGe Metal-Oxide-Semiconductor Devices, IEEE Electron Device Lett., vol. 12, no. 5, pp. 246-248, May 1991.
 25. J. Eugene, F.K. LeGoues, J.P. Kesan, S.S. Iyer, and F.M. d’Heurle, “Diffusion versus Oxidation Rates in Silicon-Germanium Alloys,” Appl. Phys. Lett., vol. 59, no. 1, pp. 78-80, 1 Jul. 1991.
26. U. Gennser, J.P. Kesan, D.A. Syphers, T.P. Smith III, S.S. Iyer, and E.S. Yang, “Probing Band Structure Anisotropy in Quantum Wells via Magnetotunneling,” Phys. Rev. Lett., vol. 67, no. 27, pp. 3828-3831, 30 Dec. 1991.
27. U. Gennser, J.P. Kesan. & Technol. B, vol. 10, no. 2, pp. 940-942, Mar./Apr. 1992.
28. M.S. Goorsky, J.P. Kesan, J.A. Ott, and J.A. Angilello, “Strain Relaxation and Interdiffusion in Si/Si1-xGex Strained Layer Superlattices,” J. Vac. Sci. & Technol. B, vol. 10, no. 2, pp. 927-929, Mar./Apr. 1992.
29. H.K. Liou, X. Wu, U. Gennser, J.P. Kesan, S.S. Iyer, K.N. Tu, and E.S. Yang, “Interfacial Reactions and Schottky Barriers of Pt and Pd on Epitaxial Si1-xGex Alloys,” Appl. Phys. Lett., vol. 60, no. 5, pp. 577-579, 3 Feb. 1992.
30. U. Gennser, J.P. Kesan, S.S. Iyer, J.A. Ott, and E.S. Yang, “Influence of Device Structure and Growth Conditions on the Tunneling Characteristics of Si/Si1-xGex Double Barrier Structures,” J. Elect. Mat. Letters, 1993.
31. J.C. Tsang, J.P. Kesan, J.L. Freeouf, F.K. LeGoues, and S.S. Iyer, “Raman Spectroscopy of Ordering in Si0.5Ge0.5 Alloys, Phys. Rev. B, vol. 46, no. 11, 15 Sep. 1992-I.
32. J.P. Kesan, F.K. LeGoues, and S.S. Iyer, “Influence of Epitaxial Growth Conditions and Surface Reconstructions on Long Range Order in Si1-xGex Alloys,” Phys. Rev. B, vol. 46, no. 3, pp. 1576-1581, 15 Jul. 1992.
33. J.P. Kesan, E. Bassous, P. Munguia, S.F. Pesarcik, S.S. Iyer, and J.-M. Halbout, “Electroluminescence and Photoluminescence from Microporous Silicon p-n Junctions,” to be published in J. Vac. Sci. & Technol. A, 1992.
34. J.P. Kesan, U. Gennser, D.A. Syphers, T.P. Smith III, and S.S. Iyer, “Angle-resolved magneto-tunneling spectroscopy to probe valence band anisotropy in Si/Si1-xGex quantum wells, J. Vac. Sci. & Technol. B, vol. 11, no. 3, pp. 1140-1144, May/Jun. 1993.
35. E.T. Yu, M.B. Johnson, J.P. Kesan, A.R. Powell, J.-M. Halbout, and S.S. Iyer, “Cross-sectional scanning tunneling microscopy of MBE-grown Si p-n junctions and Si/SiGe superlattices,” J. Crystal Growth, vol. 127, pp. 435-439, 1993.
36. Y. Taur, S. Cohen, S. Wind, T. Lii, C. Hsu, D. Quinlan, C.A. Chang, D. Buchanan, P. Agnello, Y.-J. Mii, C. Reeves, A. Acovic, and J. Kesan, “Experimental 0.1-m p-Channel MOSFET with p+-polysilicon gate on 35 Gate oxide,” IEEE Elect. Dev. Lett., vol. 14, no. 6, pp. 304-306, June 1993.
37. J.-P. Cheng, J.P. Kesan, D.A. Grutzmacher, T.O. Sedgwick, and J.A. Ott, “Cyclotron Resonance studies of two-dimensional holes in strained Si1-xGex/Si quantum wells, Appl. Phys. Lett., vol. 62, no. 13, pp. 1522-1524, 29 Mar. 1993.
38. D.A.Grutzmacher, T.O. Sedgwick, G.A. Northrop, A. Zaslavsky, A.R. Powell, and J.P. Kesan, “Very narrow SiGe/Si quantum wells deposited by low-temperature atmospheric pressure chemical vapor deposition,” J. Vac. Sci. & Technol. B, vol. 11, no. 3, pp. 1083-1087, May/Jun. 1993.
39. M. Arienzo, J.H. Comfort, E.F. Crabbé, D.L. Harame, S.S. Iyer, J.P. Kesan, B.S. Meyerson, G.L. Patton, J.M.C. Stook, and Y.-C. Sun, “SiGe heterojunctions: Devices and applications,” Microelectronic Engineering, vol. 19, pp. 519-527, 1992.
40. F.K. LeGoues, R.M. Tromp, J.P. Kesan, and J. Tsang, “Critical test of the structure of the ordered phase in epitaxially grown Si1-xGex films,” PRB Rapid Comm., vol. 47, no. 15, pp. 10012-10015, 15 April 1993-I.
41. T.O. Sedgwick, D.A. Grutzmacher, A. Zaslavsky, and J.P. Kesan, “Selective SiGe and heavily As doped Si deposited at low temperature by atmospheric pressure chemical vapor deposition,” J. Vac. Sci. & Technol. B, vol. 11, no. 3, pp. 1124-1128, May/Jun. 1993.
42. H.R. Choo, X.F. Hu and M.C. Downer, AFemtosecond ellipsometric study of nonequilibrium carrier dynamics in Ge and epitaxial Si1-xGex, Appl. Phys. Lett., vol. 63, no. 4, 26 July 1993.
43. J.-P. Cheng, J.P. Kesan, D.A. Grutzmacher and T.O. Sedgwick, “Cyclotron effective mass of holes in strained Si1-xGex/Si quantum well structures, Surf. Sci., vol. 305, pp. 275-279, 1994.
44. J.-P. Cheng, J.P. Kesan, D.A. Grutzmacher and T.O. Sedgwick, “Cyclotron effective mass of holes in Si1-xGex/Si quantum wells: Strain and nonparabolicity effects, Appl. Phys. Lett., vol. 64, no. 13, pp. 1681-1683, 28 March 1994.
45. M. Ghioni, F. Zappa, J.P. Kesan, and J. Warnock, AA VLSI-compatible High-Speed Silicon Photodetector for Optical Data Link Applications, IEEE Trans. Elect. Dev., vol. 43, no. 7, pp. 1054-1060, July 1996.
46. The Relationship Between Intellectual Property Protection and Biotechnology B A Multi-Disciplinary Perspective, 44 American Behavioral Scientist 464 (Nov. 2000) (Invited paper).
47. Designing an Optimal Intellectual Property System for Plants: A U.S. Supreme Court Debate, with M. Janis, 19 Nature Biotechnology 981 (2001).
48. Intellectual Property Protection for Plant Innovation: Unresolved Issues After J.E.M. v. Pioneer, with M. Janis, 20 Nature Biotechnology 1161 (2002).
49. Incorporating Societal Concerns into Communication Technologies, with R. Shah, IEEE Technology & Society 28 (Summer 2003).
50. Manipulating the Governance Characteristics of Code, with R. Shah, Info 5.4, 3-9 (2003).
51. Nurturing Software: How Societal Institutions Shape the Development of Software, with R. Shah, 48 Communications of the ACM 80 (Sept. 2005).
 52. Property Rights and Incentives to Invest in Seed Varieties: Governmental Regulations in Argentina, with A. Gallo, AgBioForum, vol. 8, pp. 118-126 (2005).
 53. Why are the United States and the European Union Failing to Regulate Electronic Commerce Efficiently? Going Beyond the Bottom-Up and Top-Down Regulatory Alternatives, with A. Gallo, Euro. J. L. & Econ., vol. 21, no. 3, pp. 237-266 (May 2006)
54. The Privatization of the Internet’s Backbone Network, with R. Shah, J. of Broadcasting & Electronic Media, vol. 51, no. 1, pp. 93-109 (2007).
55. How Architecture Regulates, with R. Shah, J. of Architectural & Planning Research, vol. 24, no. 4, pp. 350-359 (2007).
56. Pondering the Politics of Private Procedures: The Case of ICANN, with A. Gallo, I/S: A Journal of Law and Policy for the Information Society, vol. 4, no. 1, pp. 345-408 (2008).
57. Setting Online Policy With Software Defaults, with R. Shah, Information, Communication, And Society, vol. 11, no. 7, pp. 989-1007 (Oct. 2008).
58. Lessons for Government Adoption of Open Standards: A Case Study of the Massachusetts Policy, with R. Shah and A. Kennis, Journal of Information Technology & Politics, vol. 5, no. 4, pp. 387-398 (2008).
59. Recipes for Cookies: How Institutions Shape Communication Technologies, with R. Shah, New Media & Society, vol. 11, no. 3, pp. 315-336 (2009).
60. Running Code as Part of an Open Standards Policy, with R. Shah, First Monday, vol. 14, no. 6, 1 June 2009.
61. Developing a Comprehensive Patent Related Information Retrieval Tool, with S. Taduri, H. Yu, G. Lau and K. Law, JOURNAL OF THEORETICAL AND APPLIED ELECTRONIC COMMERCE RESEARCH, vol. 6, no. 2, pp. 1-16 (Aug. 2011).
62. Mining Information Across Multiple Domains: A Case Study of Application to Patent Laws and Regulations in Biotechnology, with H. Yu, S. Taduri, G. Lau and K. Law, GOVERNMENT INFORMATION QUARTERLY, vol. 29, no. 1, pp. S11-S21 (Jan. 2012).
63. A Legal Analysis of the Effects of the Renewable Fuel Standard (RFS2) and Clean Air Act on the Commercialization of Biobutanol as a Transportation Fuel in the United States, with T. Slating, GLOBAL CHANGE BIOLOGY (GCB) BIOENERGY, no. 4, pp. 107-118 (2012).
64. Lost in Translation: Interoperability Issues for Open Standards, I/S: A JOURNAL OF LAW AND POLICY FOR THE INFORMATION SOCIETY, vol. 8, no. 1, pp. 119-147 (Summer 2012).
65. Heterogeneity Among Patent Plaintiffs: An Empirical Analysis of Patent Case Progression, Settlement, and Adjudication, with C. Cotropia and D. Schwartz, J. EMPIRICAL LEGAL STUD., vol. 15, no. 1, pp. 80-125 (March 2018).
66. Understanding Patent “Privateering”: A Quantitative Assessment, with A. Layne-Farrar and D.L. Schwartz, under review at J. EMPIRICAL LEGAL STUD., Spring 2018.
67. Do Tax Policies Drive Innovation by SMEs in China?, with R. Wang, to be submitted to J. EMPIRICAL LEGAL STUD., Summer 2018.
68. Studying the Impact of eBay on Injunctive Relief in Patent Cases, with K. Gupta, to be submitted to J. EMPIRICAL LEGAL STUD., Summer 2018.
69. Commercialization of University-Originating Technologies and Government vs. Industry Funding, with H.-S. Yang, to be submitted to the J. OF TECH. TRANSFER, 2018.